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The Floating NBL Architecture: Enabler of a Quasi-SOI process

Subjects: Power, Energy and Industry Applications; floating; buried layer

  • Source: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2020 32nd

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Alternative Approach for Substrate Connection Using Deep Trench Isolated Pockets

Subjects: Components, Circuits, Devices and Systems; Power, Energy and Industry Applications; Implants

  • Source: 2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Advanced Semiconductor Manufacturing Conference (ASMC), 2019 30th Annual SEMI. :1-4 May, 2019

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A high-speed SOI-LIGBT with electric potential modulation trench and low-doped buried layer

Subjects: Components, Circuits, Devices and Systems; Power, Energy and Industry Applications; Current density

  • Source: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2018

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Design and analysis of a double RESURF 700V LIGBT with quasi-vertical DMOSFET in junction isolation technology

Subjects: Power, Energy and Industry Applications; Anodes; Junctions

  • Source: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE

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Innovative Buried Layer Rectifier with 0.1V ultralow forward conduction voltage

Subjects: Power, Energy and Industry Applications; Components, Circuits, Devices and Systems; Schottky diodes

  • Source: 2012 24th International Symposium on Power Semiconductor Devices and ICs Power Semiconductor Devices and ICs (ISPSD), 2012 24th

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  • 1-10 of  808,496 results for "Power, Energy and Industry Applications or floating or buried layer or self-organisation or isolation"