Electric Field Engineering to Extend Capability of NLDMOS from 70V to 90V Without Added Cost

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  • Additional Information
    • Publication Information:
      IEEE
    • Publication Date:
      2020
    • Abstract:
      In a given multipurpose BCD technology, the device implants are set by the main workhorse devices. Typically, doping levels are determined by optimizing Rsp and other key properties of the main devices, often settling with optimized Rsp-Bvdss trade-off. In some cases, HV applications (in particular automotive) require devices with higher Bvdss (breakdown) e.g. for level shifting to floating domains, switching external HV signals, protecting the IC against overstress, etc. This requires boosting the Bvdss of a given technology without adding cost or additional process steps. Moreover, the device architecture needs to be portable across many flavors of the core process, including e.g. SOI (Silicon On Insulator) version. This work outlines an architecture that increases operating voltage of NLDMOS device from 70V to 90V by electric field engineering. The proposed solution doesn’t require new layers and is portable to other technologies.
    • Contents Note:
      Conference Acronym: ISPSD
    • Author Affiliations:
      ON Semiconductor,Roznov pod Radhostem,CZ
      ON Semiconductor,Mechelen,BE
      ON Semiconductor,Gresham,OR,US
      ON Semiconductor,Phoenix,AZ,US
    • ISBN:
      978-1-7281-4836-6
    • ISSN:
      1946-0201
    • Relation:
      2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
    • Accession Number:
      10.1109/ISPSD46842.2020.9170036
    • Rights:
      Copyright 2020, IEEE
    • AMSID:
      9170036
    • Conference Acronym:
      ISPSD
    • Date of Current Version:
      2020
    • Document Subtype:
      IEEE Conference
    • Notes:
      Conference Location: Vienna, Austria, Austria

      Conference Start Date: 13 Sept. 2020

      Conference End Date: 18 Sept. 2020
    • Accession Number:
      edseee.9170036
  • Citations
    • ABNT:
      PJENCAK, J. et al. Electric Field Engineering to Extend Capability of NLDMOS from 70V to 90V Without Added Cost. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium on, [s. l.], p. 400–403, 2020. DOI 10.1109/ISPSD46842.2020.9170036. Disponível em: http://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edseee&AN=edseee.9170036. Acesso em: 30 out. 2020.
    • AMA:
      Pjencak J, Janssens J, Agam M, Seliga L, Chen W. Electric Field Engineering to Extend Capability of NLDMOS from 70V to 90V Without Added Cost. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium on. September 2020:400-403. doi:10.1109/ISPSD46842.2020.9170036
    • APA:
      Pjencak, J., Janssens, J., Agam, M., Seliga, L., & Chen, W. (2020). Electric Field Engineering to Extend Capability of NLDMOS from 70V to 90V Without Added Cost. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium On, 400–403. https://doi.org/10.1109/ISPSD46842.2020.9170036
    • Chicago/Turabian: Author-Date:
      Pjencak, Jaroslav, Johan Janssens, Moshe Agam, Ladislav Seliga, and Weize Chen. 2020. “Electric Field Engineering to Extend Capability of NLDMOS from 70V to 90V Without Added Cost.” 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium On, September, 400–403. doi:10.1109/ISPSD46842.2020.9170036.
    • Harvard:
      Pjencak, J. et al. (2020) ‘Electric Field Engineering to Extend Capability of NLDMOS from 70V to 90V Without Added Cost’, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium on, pp. 400–403. doi: 10.1109/ISPSD46842.2020.9170036.
    • Harvard: Australian:
      Pjencak, J, Janssens, J, Agam, M, Seliga, L & Chen, W 2020, ‘Electric Field Engineering to Extend Capability of NLDMOS from 70V to 90V Without Added Cost’, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium on, pp. 400–403, viewed 30 October 2020, .
    • MLA:
      Pjencak, Jaroslav, et al. “Electric Field Engineering to Extend Capability of NLDMOS from 70V to 90V Without Added Cost.” 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium On, Sept. 2020, pp. 400–403. EBSCOhost, doi:10.1109/ISPSD46842.2020.9170036.
    • Chicago/Turabian: Humanities:
      Pjencak, Jaroslav, Johan Janssens, Moshe Agam, Ladislav Seliga, and Weize Chen. “Electric Field Engineering to Extend Capability of NLDMOS from 70V to 90V Without Added Cost.” 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium On, September 1, 2020, 400–403. doi:10.1109/ISPSD46842.2020.9170036.
    • Vancouver/ICMJE:
      Pjencak J, Janssens J, Agam M, Seliga L, Chen W. Electric Field Engineering to Extend Capability of NLDMOS from 70V to 90V Without Added Cost. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium on [Internet]. 2020 Sep 1 [cited 2020 Oct 30];400–3. Available from: http://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edseee&AN=edseee.9170036