Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness

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  • Additional Information
    • Publication Information:
      IEEE
    • Publication Date:
      2020
    • Abstract:
      Non-Isothermal simulations to understand Short-Circuit (SC) behavior of SiC MOSFETs were performed. Using the established model, structures to enhance the SC ruggedness were proposed. Thin gate oxide and a narrow JFET region are shown to reduce saturation current enhancing SC ruggedness without increasing R on,sp . Results indicate thin gate oxide offers moderate improvement in SC capability, at the cost of increased C gs . In contrast, narrow JFET region provides much improved (2×) SC ruggedness, as well as lower R on,sp , with no negative impact on C gs .
    • Contents Note:
      Conference Acronym: IRPS
    • Author Affiliations:
      State University of New York Polytechnic Institute,Colleges of Nanoscale Science and Engineering,Albany,NY,12203
      The Ohio State University,Columbus,OH,USA,43210
      Sandia National Laboratories,Washington, DC,20024
    • ISBN:
      978-1-7281-3199-3
    • ISSN:
      1938-1891
    • Relation:
      2020 IEEE International Reliability Physics Symposium (IRPS)
    • Accession Number:
      10.1109/IRPS45951.2020.9128324
    • Rights:
      Copyright 2020, IEEE
    • AMSID:
      9128324
    • Conference Acronym:
      IRPS
    • Date of Current Version:
      2020
    • Document Subtype:
      IEEE Conference
    • Notes:
      Conference Location: Dallas, TX, USA, USA

      Conference Start Date: 28 April 2020

      Conference End Date: 30 May 2020
    • Accession Number:
      edseee.9128324
  • Citations
    • ABNT:
      KIM, D. et al. Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness. 2020 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2020 IEEE International, [s. l.], p. 1–6, 2020. DOI 10.1109/IRPS45951.2020.9128324. Disponível em: http://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edseee&AN=edseee.9128324. Acesso em: 28 nov. 2020.
    • AMA:
      Kim D, Morgan AJ, Yun N, Sung W, Agarwal A, Kaplar R. Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness. 2020 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2020 IEEE International. April 2020:1-6. doi:10.1109/IRPS45951.2020.9128324
    • APA:
      Kim, D., Morgan, A. J., Yun, N., Sung, W., Agarwal, A., & Kaplar, R. (2020). Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness. 2020 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2020 IEEE International, 1–6. https://doi.org/10.1109/IRPS45951.2020.9128324
    • Chicago/Turabian: Author-Date:
      Kim, Dongyoung, Adam J Morgan, Nick Yun, Woongje Sung, Anant Agarwal, and Robert Kaplar. 2020. “Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness.” 2020 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2020 IEEE International, April, 1–6. doi:10.1109/IRPS45951.2020.9128324.
    • Harvard:
      Kim, D. et al. (2020) ‘Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness’, 2020 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2020 IEEE International, pp. 1–6. doi: 10.1109/IRPS45951.2020.9128324.
    • Harvard: Australian:
      Kim, D, Morgan, AJ, Yun, N, Sung, W, Agarwal, A & Kaplar, R 2020, ‘Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness’, 2020 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2020 IEEE International, pp. 1–6, viewed 28 November 2020, .
    • MLA:
      Kim, Dongyoung, et al. “Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness.” 2020 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2020 IEEE International, Apr. 2020, pp. 1–6. EBSCOhost, doi:10.1109/IRPS45951.2020.9128324.
    • Chicago/Turabian: Humanities:
      Kim, Dongyoung, Adam J Morgan, Nick Yun, Woongje Sung, Anant Agarwal, and Robert Kaplar. “Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness.” 2020 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2020 IEEE International, April 1, 2020, 1–6. doi:10.1109/IRPS45951.2020.9128324.
    • Vancouver/ICMJE:
      Kim D, Morgan AJ, Yun N, Sung W, Agarwal A, Kaplar R. Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness. 2020 IEEE International Reliability Physics Symposium (IRPS), Reliability Physics Symposium (IRPS), 2020 IEEE International [Internet]. 2020 Apr 1 [cited 2020 Nov 28];1–6. Available from: http://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edseee&AN=edseee.9128324