Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-grade MCU and IOT Applications

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  • Additional Information
    • Publication Information:
      IEEE
    • Publication Date:
      2019
    • Abstract:
      We demonstrate the manufacturable 22nm FD-SOI 40Mb embedded MRAM (eMRAM), by achieving product functionality and reliability at package level across industrial-grade operating temperature range (-40 to 125 °C) with ECC-off mode. The magnetic tunnel junction stack, integration and etch processes were optimized to achieve superior MTJ performances to meet all product requirements. From package level data, we confirmed the product reliability by passing LTOL, HTOL, 1M endurance cycling and 5x solder reflows tests with failure rate
    • Contents Note:
      Conference Acronym: IEDM
    • Author Affiliations:
      GLOBALFOUNDRIES,Singapore,738406
      GLOBALFOUNDRIES,Malta,NY,USA
      GLOBALFOUNDRIES,Dresden,Germany
    • ISBN:
      978-1-7281-4032-2
    • ISSN:
      2156-017X
    • Relation:
      2019 IEEE International Electron Devices Meeting (IEDM)
    • Accession Number:
      10.1109/IEDM19573.2019.8993454
    • Rights:
      Copyright 2019, IEEE
    • AMSID:
      8993454
    • Conference Acronym:
      IEDM
    • Date of Current Version:
      2019
    • Document Subtype:
      IEEE Conference
    • Notes:
      Conference Location: San Francisco, CA, USA, USA

      Conference Start Date: 7 Dec. 2019

      Conference End Date: 11 Dec. 2019
    • Accession Number:
      edseee.8993454
  • Citations
    • ABNT:
      NAIK, V. B. et al. Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-grade MCU and IOT Applications. 2019 IEEE International Electron Devices Meeting (IEDM), Electron Devices Meeting (IEDM), 2019 IEEE International, [s. l.], 2019. DOI 10.1109/IEDM19573.2019.8993454. Disponível em: http://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edseee&AN=edseee.8993454. Acesso em: 29 out. 2020.
    • AMA:
      Naik VB, Lim JH, Lee TY, et al. Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-grade MCU and IOT Applications. 2019 IEEE International Electron Devices Meeting (IEDM), Electron Devices Meeting (IEDM), 2019 IEEE International. December 2019. doi:10.1109/IEDM19573.2019.8993454
    • APA:
      Naik, V. B., Lim, J. H., Lee, T. Y., Neo, W. P., Dixit, H., K, S., Goh, L. C., Ling, T., Hwang, J., Zeng, D., Ting, J. W., Lee, K., Toh, E. H., Zhang, L., Low, R., Balasankaran, N., Zhang, L. Y., Gan, K. W., Hau, L. Y., … Behin-Aein, B. (2019). Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-grade MCU and IOT Applications. 2019 IEEE International Electron Devices Meeting (IEDM), Electron Devices Meeting (IEDM), 2019 IEEE International. https://doi.org/10.1109/IEDM19573.2019.8993454
    • Chicago/Turabian: Author-Date:
      Naik, V. B., J. H. Lim, T. Y. Lee, W. P. Neo, H. Dixit, S. K, L. C. Goh, et al. 2019. “Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-Grade MCU and IOT Applications.” 2019 IEEE International Electron Devices Meeting (IEDM), Electron Devices Meeting (IEDM), 2019 IEEE International, December. doi:10.1109/IEDM19573.2019.8993454.
    • Harvard:
      Naik, V. B. et al. (2019) ‘Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-grade MCU and IOT Applications’, 2019 IEEE International Electron Devices Meeting (IEDM), Electron Devices Meeting (IEDM), 2019 IEEE International. doi: 10.1109/IEDM19573.2019.8993454.
    • Harvard: Australian:
      Naik, VB, Lim, JH, Lee, TY, Neo, WP, Dixit, H, K, S, Goh, LC, Ling, T, Hwang, J, Zeng, D, Ting, JW, Lee, K, Toh, EH, Zhang, L, Low, R, Balasankaran, N, Zhang, LY, Gan, KW, Hau, LY, Mueller, J, Pfefferling, B, Kallensee, O, Yamane, K, Tan, SL, Seet, CS, You, YS, Woo, ST, Quek, E, Siah, SY, Pellerin, J, Chao, R, Kwon, J, Thiyagarajah, N, Chung, NL, Jang, SH & Behin-Aein, B 2019, ‘Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-grade MCU and IOT Applications’, 2019 IEEE International Electron Devices Meeting (IEDM), Electron Devices Meeting (IEDM), 2019 IEEE International, viewed 29 October 2020, .
    • MLA:
      Naik, V. B., et al. “Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-Grade MCU and IOT Applications.” 2019 IEEE International Electron Devices Meeting (IEDM), Electron Devices Meeting (IEDM), 2019 IEEE International, Dec. 2019. EBSCOhost, doi:10.1109/IEDM19573.2019.8993454.
    • Chicago/Turabian: Humanities:
      Naik, V. B., J. H. Lim, T. Y. Lee, W. P. Neo, H. Dixit, S. K, L. C. Goh, et al. “Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-Grade MCU and IOT Applications.” 2019 IEEE International Electron Devices Meeting (IEDM), Electron Devices Meeting (IEDM), 2019 IEEE International, December 1, 2019. doi:10.1109/IEDM19573.2019.8993454.
    • Vancouver/ICMJE:
      Naik VB, Lim JH, Lee TY, Neo WP, Dixit H, K S, et al. Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-grade MCU and IOT Applications. 2019 IEEE International Electron Devices Meeting (IEDM), Electron Devices Meeting (IEDM), 2019 IEEE International [Internet]. 2019 Dec 1 [cited 2020 Oct 29]; Available from: http://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=edseee&AN=edseee.8993454